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Product Detailed Parameters
- Description：IGBT 1600V 33A TO-247AD
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1600 V
- Current - Collector (Ic) (Max)：33 A
- Current - Collector Pulsed (Icm)：40 A
- Vce(on) (Max) @ Vge, Ic：7.1V @ 15V, 20A
- Power - Max：350 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：130 nC
- Td (on/off) @ 25°C：-
- Test Condition：960V, 20A, 22Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
Download product information
Overview
The IXYS IXBH40N160 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power conversion applications. It features a Direct Copper Bonded (DCB) substrate on a copper chip, providing robust thermal management and electrical isolation. The device offers a blocking voltage of 1600V and supports high-frequency operation with low gate drive requirements. Its isolated mounting surface facilitates secure installation in high-power density systems.
Feature Summary
- Direct Copper Bonded (DCB) substrate on copper chip for enhanced thermal performance
- Isolated mounting surface ensuring safe integration
- High blocking voltage capability for robust operation
- Optimized for high-frequency switching applications
Applications
- Switch mode power supplies
- Resonant mode power supplies
- Uninterruptible Power Supplies (UPS)
- Laser generators
- Capacitor discharge circuits
Procurement Notes
Verify the specific manufacturer datasheet for the IXBH40N160 to confirm exact electrical parameters, pinout configurations, and mechanical dimensions. Ensure compatibility with existing thermal management solutions and gate drive circuits before procurement. Cross-reference part numbers with official IXYS documentation to avoid counterfeit components.
Selection Notes
Select the IXBH40N160 for applications requiring high voltage blocking capabilities and efficient thermal dissipation. Consider its suitability for resonant and switch-mode topologies where high-frequency operation is critical. Evaluate the need for isolated mounting surfaces and low gate drive requirements in your system design.
Part Context
IXYS Corporation specializes in power semiconductors, including IGBTs and MOSFETs. The company has a history of acquiring other semiconductor manufacturers to expand its product portfolio. The IXBH40N160 belongs to a family of high-voltage IGBTs designed for industrial and commercial power electronics.
Replacement Considerations
Consult official IXYS documentation or authorized distributors for verified substitute part numbers. Do not assume cross-compatibility with generic high-voltage IGBTs without verifying electrical and thermal specifications.
