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Product Detailed Parameters
- Description：IGBT 3000V 30A TO-268AA
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：3000 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 12A
- Power - Max：160 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：62 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：1.4 µs
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268AA
- Grade：-
- Qualification：-
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Overview
The IXBT12N300 is a high-voltage IGBT from the Very High Voltage series, manufactured by IXYS. It utilizes silicon technology and features a single configuration in a D3PAK-3 (TO-268-3) surface-mount package. Key electrical parameters include a collector-emitter maximum voltage of 3 kV and a continuous collector current of 30 A at 25°C. The device exhibits a collector-emitter saturation voltage of 3.2 V and supports a power dissipation of 160 W. Operating temperatures range from -55°C to +150°C, with a gate-emitter voltage limit of ±20 V.
Feature Summary
- Monolithic Bipolar MOS Transistor architecture providing high gain characteristics
- Designed for very high voltage applications within the BIMOSFET family
- Surface-mount construction suitable for automated assembly processes
Applications
- High voltage switching circuits
- Industrial power conversion systems
- Inverter topologies requiring high blocking voltage
Procurement Notes
Verify the specific suffix designation against official datasheets, as variations may exist between IXBT12N300 and IXBT12N300HV. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure thermal management solutions align with the 160 W power dissipation rating and TO-268-3 package constraints for reliable operation.
Selection Notes
Select this component when a 3 kV blocking capability is required in a compact surface-mount form factor. Compare the 3.2 V saturation voltage against system efficiency targets. Consider the 30 A continuous current rating relative to load requirements and ambient temperature derating curves specified in the technical documentation.
Part Context
This part belongs to IXYS's high-voltage discrete semiconductor portfolio, specifically the BIMOSFET line. It serves as a robust switching element for demanding power electronics environments. The TO-268-3 package offers a balance between thermal performance and board space efficiency for medium-power industrial applications.
Replacement Considerations
Direct substitutes are not explicitly confirmed in available public data. Evaluate alternatives based on matching 3 kV voltage ratings, comparable current capabilities, and compatible pinout configurations.
