IXBX50N360HV

$58.82

Description：IGBT 3600V 125A TO-247PLUS-HV
Series：BIMOSFET™

SKU:51583525c985 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT 3600V 125A TO-247PLUS-HV
Series：BIMOSFET™
Mfr：IXYS
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：3600 V
Current - Collector (Ic) (Max)：125 A
Current - Collector Pulsed (Icm)：420 A
Vce(on) (Max) @ Vge, Ic：2.9V @ 15V, 50A
Power - Max：660 W
Switching Energy：-
Input Type：Standard
Gate Charge：210 nC
Td (on/off) @ 25°C：46ns/205ns
Test Condition：960V, 50A, 5Ohm, 15V
Reverse Recovery Time (trr)：1.7 µs
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3 Variant
Supplier Device Package：TO-247PLUS-HV
Grade：-
Qualification：-

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IXBX50N360HV

Overview

The IXBX50N360HV is a single reverse conducting IGBT manufactured by IXYS. It features a blocking voltage of 3600V and a continuous collector current rating of 125A. The device is housed in a TO-247PLUS-HV through-hole package, suitable for high-power applications requiring high voltage isolation. It dissipates up to 660W of power and exhibits a switching time of 205ns. This component utilizes silicon technology and is designed for efficient thermal management in industrial power systems.

Feature Summary

High blocking voltage capability for robust operation in high-voltage circuits
Integrated reverse diode functionality within the IGBT structure
Low conduction losses optimized for energy efficiency
Space-saving package design facilitating easy mounting

Applications

Industrial motor drives
Uninterruptible power supplies (UPS)
High-frequency induction heating systems

Procurement Notes

Verify the specific datasheet revision and electrical characteristics against the manufacturer's official documentation before integration. Confirm that the thermal management solution aligns with the 660W power dissipation rating. Ensure the TO-247PLUS-HV package dimensions match the PCB layout requirements. Cross-reference the 3600V rating with the system's peak voltage stresses to guarantee adequate safety margins.

Selection Notes

Select this component when a combined IGBT and freewheeling diode solution is required to reduce part count and board space. The 3600V rating makes it suitable for medium-voltage AC drive applications. Consider the 125A current capacity relative to the load profile. The 205ns switching speed offers a balance between performance and electromagnetic interference considerations compared to faster devices.

Part Context

This device belongs to IXYS's high-voltage IGBT portfolio, specifically designed for demanding power electronics applications. It integrates the advantages of BIMOSFET technology with reverse conductivity features. The product line targets industries requiring reliable, high-density power conversion solutions with minimal footprint.