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The IXDA20N120AS is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 1200V and a continuous collector current rating of 20A at 25°C. The device utilizes GenX5 trench technology to achieve low on-state saturation voltage and efficient switching performance. It is housed in a TO-247AD package designed for through-hole mounting, supporting high power dissipation capabilities suitable for industrial applications.
Verify the specific suffix 'AS' against the manufacturer datasheet to confirm exact packaging and tape-and-reel specifications. Ensure compatibility with existing thermal management designs, as the TO-247AD package requires appropriate heatsinking. Confirm RoHS compliance status if required by project regulations before finalizing procurement orders.
Select this component when a 1200V blocking capability and 20A continuous current are required in a standard through-hole package. Compare the saturation voltage and gate charge parameters against alternative GenX5 devices to ensure optimal efficiency for the specific switching frequency and load conditions of the target circuit design.
This part belongs to the IXYS GenX5 series of trench IGBTs. The series is characterized by improved switching losses and robust short-circuit withstand capability compared to previous generations. The TO-247AD form factor provides a balance between thermal performance and ease of integration into standard PCB layouts or chassis-mounted assemblies.
Direct substitutes within the same family include the IXDA20N120A. Verify pinout compatibility and thermal resistance values when considering cross-references from other manufacturers. Ensure that any replacement device meets or exceeds the 1200V voltage rating and 20A current handling requirements.