IXFR80N20Q

Single FETs, MOSFETs Overview

The IXFR80N20Q is an N-channel enhancement mode power MOSFET from the IXYS HiPerFET family. It features a drain-source voltage (Vds) of 200 V and a continuous drain current (Id) of 80 A. The device utilizes a Direct-Copper-Bond substrate for high power dissipation capabilities. Key electrical parameters include a maximum on-state resistance (Rds(on)) of 28 mΩ, a gate charge (Qg) of 67 nC at 10 V, and a maximum power dissipation (Pd) of 690 W. It operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes silicon chip on a Direct-Copper-Bond substrate for enhanced thermal performance
• Engineered for hard switching and resonant mode applications
• Features avalanche rating capability with fast intrinsic diode characteristics

Single FETs, MOSFETs Applications

• Hard switching power supplies
• Resonant mode converters
• High-current industrial power systems

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet version and package tolerance against the manufacturer's official documentation before integration. Confirm that the thermal management design accommodates the specified power dissipation limits under actual operating conditions. Ensure compatibility with the intended gate drive voltage levels to maintain optimal switching performance and prevent overstress.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high current handling at 200 V with low conduction losses. The integrated diode and ruggedness make it suitable for topologies demanding high dv/dt performance. Evaluate the thermal resistance requirements carefully to ensure the heat sinking solution supports the 690 W dissipation rating effectively in the target application environment.

Single FETs, MOSFETs Part Context

This part belongs to the HiPerFET Q3-Class series, which offers reduced on-state resistance and gate charge compared to previous generations. The ISOPLUS247 package provides isolated mounting options, facilitating easier integration into high-voltage systems without additional insulation barriers while maintaining robust mechanical stability.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with IXFH80N20Q for similar specifications in standard TO-247 packages if isolation is not required. Verify pinout compatibility and thermal interface dimensions before substituting to ensure proper fit and function within the existing PCB layout and heatsink assembly.