IXGA15N120B

Overview

The IXGA15N120B is a silicon single IGBT from the IXYS GenX3 family, housed in a TO-263AA (D2PAK) surface-mount package. It features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 30 A. The device operates within a temperature range of -55°C to +150°C and includes an integrated anti-parallel fast recovery diode.

Feature Summary

• Utilizes IXYS GenX3 technology for optimized switching performance
• Integrates a fast recovery anti-parallel diode for efficient commutation
• Designed for robust operation in high-voltage power conversion applications

Applications

• Motor drive inverters
• Uninterruptible power supplies (UPS)
• High-frequency power converters

Procurement Notes

Verify component authenticity through authorized IXYS distributors or certified partners. Confirm RoHS compliance status and specific packaging quantities prior to ordering. Ensure storage conditions meet semiconductor handling standards to prevent moisture sensitivity issues during assembly processes.

Selection Notes

Select this component for designs requiring high blocking voltage and moderate current in a compact surface-mount form factor. Evaluate thermal management requirements based on the specified power dissipation limits. Consider the integrated diode characteristics when designing freewheeling paths in bridge configurations.

Part Context

This part belongs to the IXYS GenX3 series of insulated gate bipolar transistors. The series is characterized by advanced trench gate technology, offering improved switching speeds and reduced conduction losses compared to earlier generations. It serves as a key discrete solution for medium-power industrial electronics.

Replacement Considerations

Consult official IXYS documentation for direct cross-references. Verify pin compatibility and electrical parameters before substituting with other manufacturers' equivalents.