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Product Detailed Parameters
- Description：IGBT PT 600V 60A TO-263AA
- Series：GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 20A
- Power - Max：220 W
- Switching Energy：120µJ (on), 90µJ (off)
- Input Type：Standard
- Gate Charge：38 nC
- Td (on/off) @ 25°C：17ns/42ns
- Test Condition：300V, 20A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263AA
- Grade：-
- Qualification：-
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Overview
The IXGA30N60C3C1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It belongs to the GenX3 series and utilizes Silicon Carbide (SiC) technology. The device features a TO-247AD-3 package with three terminals. Key electrical specifications include a maximum collector-emitter voltage of 600V and a continuous collector current of 30A at 25°C. The component is designed for high-efficiency switching applications.
Feature Summary
- Incorporates Silicon Carbide (SiC) technology for enhanced thermal performance and switching efficiency.
- Part of the GenX3 product family, optimized for low conduction and switching losses.
- Single configuration suitable for discrete mounting in power electronic circuits.
Applications
- High-frequency motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific suffix C3C1 against official IXYS documentation to confirm exact binning or revision status. Check for End-of-Life (EOL) notifications or discontinuance notices from the manufacturer prior to procurement. Ensure compatibility with existing PCB footprints for the TO-247AD-3 package.
Selection Notes
Select this component when a 600V IGBT with 30A continuous current rating is required. Consider the SiC technology benefits over standard silicon devices for improved thermal management. Verify that the TO-247AD-3 package fits the mechanical constraints of the design. Compare switching characteristics against alternative GenX3 series parts if lower current ratings are acceptable.
Part Context
This part is part of the IXYS GenX3 series, which integrates advanced trench gate and field stop technologies. The inclusion of Silicon Carbide (SiC) in the substrate distinguishes it from standard silicon IGBTs, offering better performance under high-temperature conditions. The TO-247AD-3 package provides robust mechanical stability for through-hole mounting.
Replacement Considerations
Consult official IXYS substitution guides for direct replacements. Generic equivalents may not replicate the specific SiC substrate characteristics or GenX3 switching profiles. Verify pinout compatibility and thermal resistance values before substituting.
