IXGA48N60B3

Overview

The IXGA48N60B3-TRL is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) from the GenX3 series, manufactured by IXYS. It utilizes XPT technology to optimize performance characteristics. The device features a D2PAK-3 (TO-263-3) surface-mount package with a maximum collector-emitter voltage of 600 V and a continuous collector current of 48 A at 25°C. Key electrical parameters include a saturation voltage of 1.8 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation capacity of 300 W. It operates within a temperature range of -55°C to +150°C.

Feature Summary

• Incorporates IXYS GenX3 trench gate technology for optimized switching and conduction performance.
• Utilizes XPT (eXtended Plateau Technology) to achieve low saturation voltage while maintaining high blocking capability.
• Designed for robust operation with avalanche-rated characteristics in the specified voltage class.

Applications

• High-frequency switch-mode power supplies
• Motor control drives and inverters
• Uninterruptible power supply (UPS) systems

Procurement Notes

Verify the specific suffix '-TRL' indicates reel packaging when sourcing. Confirm RoHS compliance status through official datasheets or manufacturer notifications. Ensure the ordering quantity aligns with the factory pack quantity of 800 units per reel. Cross-reference the manufacturer part number with authorized distributor listings to confirm authenticity and current production status.

Selection Notes

Select this component for applications requiring a balance between low on-state voltage drop and fast switching speeds in a compact surface-mount form factor. The 600V rating suits medium-voltage AC/DC conversion tasks. Consider the thermal management requirements associated with the TO-263-3 package and the 300W power dissipation limit under your specific operating conditions.

Part Context

This IGBT belongs to the IXYS GenX3 family, which represents an evolution in trench gate technology. The 'B3' designation typically refers to specific internal process generations or pinout configurations within the IXYS portfolio. It serves as a semiconductor switching element designed to replace older planar technologies in efficiency-critical power electronics designs.

Replacement Considerations

Direct replacements must match the 600V voltage rating, 48A current capacity, and TO-263-3 package. Verify that substitute devices offer comparable saturation voltage and switching times. Check for identical pinout configurations to ensure board compatibility without redesign.