IXGH10N170A

Overview

The IXYS IXGH10N170A is a single silicon Insulated Gate Bipolar Transistor (IGBT) housed in a TO-247AD-3 through-hole package. It features a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 10 A at 25°C. The device exhibits a collector-emitter saturation voltage of 6 V, with a maximum power dissipation of 140 W. Operating within a temperature range of -55°C to +150°C, it supports a gate-emitter voltage range of ±20 V.

Feature Summary

• High-voltage capability rated for 1.7 kV collector-emitter breakdown
• Robust thermal performance supporting up to 140 W power dissipation
• Designed for high-temperature operation up to 150°C junction temperature

Applications

• Industrial motor drives and inverters
• Uninterruptible power supply (UPS) systems
• High-frequency power supplies

Procurement Notes

Verify the specific manufacturer lot code and RoHS compliance status upon order confirmation. Ensure the TO-247AD-3 package dimensions match the target PCB footprint requirements. Confirm that the supplier provides original manufacturer documentation to validate authenticity before finalizing procurement transactions.

Selection Notes

Select this component when a 1.7 kV rating is required for high-voltage switching applications. The 10 A continuous current rating suits moderate-power circuits. Consider the 6 V saturation voltage for conduction loss calculations. Verify that the TO-247AD-3 through-hole mounting style aligns with the assembly process constraints.

Part Context

This part belongs to the IXYS IXGH series of IGBTs, which are engineered for high-voltage industrial applications. The 'GH' designation typically indicates specific switching characteristics optimized for efficiency. It serves as a discrete alternative to integrated modules in lower-power density designs requiring high blocking voltage.

Replacement Considerations

Direct cross-compatibility requires matching the 1.7 kV voltage rating, TO-247AD-3 package, and similar current capabilities. Evaluate alternative IGBTs from other manufacturers based on saturation voltage and switching speed parameters. Verify pinout compatibility and thermal resistance specifications before substitution.