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Product Detailed Parameters
- Description：IGBT PT 1200V 40A TO-247AD
- Series：GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
- Power - Max：180 W
- Switching Energy：2.85mJ (on), 6.47mJ (off)
- Input Type：Standard
- Gate Charge：50 nC
- Td (on/off) @ 25°C：16ns/290ns
- Test Condition：960V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXYS IXGH20N120A3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the GenX3 series. It utilizes Planar Trench technology for optimized performance. The device features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 20 A at 25°C. It operates within a temperature range of -55°C to +150°C. Packaged in a TO-247AD-3 through-hole housing, it offers high power dissipation capabilities suitable for industrial switching applications.
Feature Summary
- GenX3 planar trench technology for low saturation voltage
- High short-circuit capability for robust operation
- Soft recovery fast ultrafast diode integrated in common-emitter configuration
Applications
- Induction heating systems
- Motor drives
- Uninterruptible power supplies (UPS)
- Switched-mode power supplies
Procurement Notes
Verify the specific suffix against official datasheets to confirm package type and electrical characteristics. Ensure thermal management solutions match the specified power dissipation limits. Confirm RoHS compliance status with the manufacturer before finalizing procurement orders.
Selection Notes
Select this component for applications requiring 1200V blocking voltage and moderate current handling up to 20A. Consider the TO-247AD-3 package for through-hole mounting requirements. Evaluate thermal resistance parameters against the system's heat sink capabilities to ensure safe operating temperatures under load.
Part Context
This IGBT is part of the IXYS GenX3 family, designed for high-efficiency power switching. It integrates a fast ultrafast diode, simplifying circuit design by eliminating external freewheeling diodes. The device targets medium-power industrial applications where reliability and switching speed are critical.
Replacement Considerations
Cross-reference with other GenX3 series parts like IXGH20N120B3 for potential pin-compatible alternatives. Verify that any substitute maintains the same voltage rating, current capacity, and package dimensions to ensure mechanical and electrical compatibility.
