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The IXGH24N120C3 is a single N-channel IGBT from the IXYS GenX3 series, designed for high-power switching applications. It features a 1200V collector-emitter breakdown voltage and a continuous collector current of 50A at 25°C. The device utilizes silicon technology in a TO-247AD-3 through-hole package. Key electrical characteristics include a maximum collector-emitter saturation voltage of 2.5V and a power dissipation rating of 250W. It operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix against the manufacturer's latest datasheet to confirm pinout and thermal characteristics. Ensure the ordering part number matches the exact generation and package variant required for your PCB layout. Cross-reference the RoHS compliance status with current regulatory requirements before finalizing procurement orders.
Select this component when a 1200V rating is required for high-voltage isolation. The 50A continuous current rating suits moderate-to-high power density designs. Consider the TO-247AD-3 package for efficient heat sinking solutions. Evaluate the trade-off between the 2.5V saturation voltage and switching speed based on the specific application frequency requirements.
This device belongs to the IXYS IXGH series, which employs GenX3 technology. This generation focuses on improving the figure of merit for hard-switching applications. The series is widely used in industrial power conversion where reliability and thermal stability are critical design constraints.
Direct substitutes may include other 1200V, 50A IGBTs in TO-247 packages from the same manufacturer or competitors. Verify that replacement parts match the pin configuration and thermal resistance specifications to ensure compatibility with existing heatsinking and circuit board layouts.