IXGH24N120C3H1

$8.02

Description：IGBT PT 1200V 48A TO-247AD
Series：GenX3™

SKU:08436c080e4c Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT PT 1200V 48A TO-247AD
Series：GenX3™
Mfr：IXYS
Package：Tube
IGBT Type：PT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：48 A
Current - Collector Pulsed (Icm)：96 A
Vce(on) (Max) @ Vge, Ic：4.2V @ 15V, 20A
Power - Max：250 W
Switching Energy：1.16mJ (on), 470µJ (off)
Input Type：Standard
Gate Charge：79 nC
Td (on/off) @ 25°C：16ns/93ns
Test Condition：600V, 20A, 5Ohm, 15V
Reverse Recovery Time (trr)：70 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AD
Grade：-
Qualification：-

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IXGH24N120C3H1

Overview

The IXYS IXGH24N120C3H1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing GenX3 technology. It features a collector-emitter voltage rating of 1200 V and a continuous collector current of 48 A at 25°C. The device operates in a TO-247AD-3 package with through-hole mounting. Key electrical parameters include a maximum power dissipation of 250 W, a collector-emitter saturation voltage of 2.6 V, and a gate-emitter voltage range of ±20 V. It supports a junction temperature up to +150°C.

Feature Summary

Utilizes IXYS GenX3 technology for optimized switching performance
Designed for high-frequency applications up to 40 kHz
Integrated anti-parallel fast recovery diode for efficient commutation

Applications

High-frequency inverters
Switched-mode power supplies (SMPS)
Induction heating systems

Procurement Notes

Verify the specific suffix C3H1 against official IXYS documentation to confirm the inclusion of the integrated diode and exact thermal characteristics. Ensure the ordering part number matches the required GenX3 generation specifications. Cross-reference the datasheet revision date to validate current parameter limits before finalizing procurement orders.

Selection Notes

Select this component for circuits requiring 1200 V blocking capability with moderate current handling. The TO-247AD package facilitates standard PCB mounting. Consider the 250 W power dissipation limit when designing heatsinking solutions. Verify that the 40 kHz frequency rating aligns with the target application's switching requirements.

Part Context

This IGBT belongs to the IXYS GenX3 family, which represents an advanced generation of silicon devices. The series is engineered to balance low conduction losses with fast switching speeds. The specific model integrates a diode, simplifying circuit topology compared to discrete combinations.