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The IXGH32N60B is a HiPerFAST IGBT manufactured by IXYS. It integrates an IGBT and an antiparallel FRED diode in a single package to reduce switching losses and save space. The device features a TO-247 insulated mounting screw hole for easy installation. Key electrical parameters include a collector-emitter voltage of 600V, a continuous collector current of 32A at 25°C, and a maximum power dissipation of 200W. The saturation voltage is typically low, supporting high-frequency applications up to 40kHz.
Verify the specific suffix and revision level when sourcing, as manufacturing updates may occur. Confirm RoHS compliance status with the supplier prior to purchase. Check for end-of-life notifications or discontinuance alerts from IXYS to ensure long-term availability for production cycles.
Select this component for designs requiring integrated freewheeling functionality without external diodes. Ensure the thermal management system supports the 200W power dissipation rating. Verify that the switching frequency requirements align with the device's capabilities within the 5 to 40kHz range.
This part belongs to the IXYS HiPerFAST family of IGBTs. It is designed for medium-speed switching applications where low conduction and switching losses are critical. The integration of the antiparallel diode distinguishes it from standard single IGBTs, offering a compact solution for power conversion circuits.
Check datasheets for compatible alternatives such as the IXGH32N60BD1 or IXGH32N60BU1 if pinout compatibility is required. Verify that substitute devices meet the same 600V blocking voltage and 32A current ratings.