IXGH48N60B3C1

Overview

The IXGH48N60B3C1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes GenX3 technology and features a TO-247AD-3 through-hole package. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 48 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.5 V, a gate-emitter voltage range of ±20 V, and a power dissipation rating of 300 W. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• GenX3 technology for optimized switching performance
• Soft recovery fast diode integrated in common-emitter configuration
• Low saturation voltage for reduced conduction losses

Applications

• Motor drive inverters
• Switched-mode power supplies
• Induction heating systems

Procurement Notes

Verify the specific suffix C1 against official IXYS documentation to confirm pinout compatibility and thermal characteristics. Ensure the ordering part number matches the exact datasheet revision required for your design. Cross-reference with authorized distributors to confirm current availability status.

Selection Notes

Select this component when a 600V IGBT with moderate current handling is required. Compare the 2.5V saturation voltage against lower-voltage alternatives if conduction loss is critical. Verify that the TO-247AD-3 package fits the thermal management constraints of the target application.

Part Context

This part belongs to the IXYS IXGH series of GenX3 IGBTs. These devices are designed for medium-power applications requiring reliable switching. The series typically integrates an anti-parallel diode, simplifying circuit design for inductive loads compared to discrete transistor-diode combinations.

Replacement Considerations

Direct replacements may include other IXYS GenX3 parts with similar voltage and current ratings, such as the IXGH48N60B3. Verify pinout compatibility and thermal resistance values before substitution.