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The IXGK320N60B3 is a single N-channel IGBT from the IXYS GenX3 series, utilizing Silicon technology. It features a TO-247AD-3 package with through-hole mounting. Key electrical parameters include a collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 500 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 1.85 V and a maximum power dissipation of 1.7 kW. It operates within a temperature range of -55°C to +175°C, with a gate-emitter voltage limit of ±20 V.
Verify the specific suffix against official datasheets to confirm pinout and thermal characteristics. Confirm RoHS compliance status via manufacturer documentation. Check for recent Product Change Notifications (PCNs) that may affect mechanical dimensions or material composition before finalizing procurement.
Select this component for high-current applications requiring 600V blocking capability. Ensure the heatsink design supports the 1.7 kW power dissipation rating. Verify that the gate driver can handle the required charge levels. Compare saturation voltage trade-offs against alternative GenX3 variants for efficiency optimization.
This part belongs to the IXYS GenX3 family of trench-gate IGBTs. It is designed for high-efficiency power conversion. The series is known for combining low conduction losses with fast switching speeds. It serves as a core switching element in medium-to-high power industrial electronics.
Direct replacements include IXGX320N60B3 and IXGN320N60A3. Verify package compatibility and thermal resistance values. Ensure equivalent voltage and current ratings are met. Cross-reference datasheets for switching time differences.