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The IXGK50N60B is a single Insulated Gate Bipolar Transistor (IGBT) from the HiPerFAST series, manufactured by IXYS. It features a 600V collector-emitter breakdown voltage and supports a maximum continuous collector current of 75A, with a pulsed current capacity of 200A. The device operates within a junction temperature range of -55°C to 150°C and dissipates up to 300W of power. Packaged in a TO-264 (IXGK) through-hole format, it exhibits a typical saturation voltage of 2.3V at 50A and 15V gate drive. Switching characteristics include turn-on and turn-off times of 50ns and 150ns respectively, measured under standard test conditions.
Verify component authenticity upon receipt as the part status is listed as obsolete. Confirm that the TO-264 footprint matches the target PCB design. Check datasheet revisions for any parameter updates prior to final integration into production hardware.
Select this component when a 600V rating and 75A continuous current are required in a TO-264 package. Consider the 2.3V saturation voltage for conduction loss calculations. Ensure the application frequency aligns with the specified switching energy values for optimal efficiency.
This IGBT belongs to the IXYS HiPerFAST family, which targets high-efficiency power conversion. The TO-264 package provides a balance between current handling capability and mounting simplicity. It serves as a discrete switching element in medium-power electronic circuits.
As the part status is obsolete, verify pinout compatibility before substituting. Potential alternatives must match the 600V/75A specification and TO-264 form factor. Consult manufacturer cross-reference lists for direct replacements.