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Product Detailed Parameters
- Description：IGBT PT 600V 75A TO-264
- Series：GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：400 A
- Vce(on) (Max) @ Vge, Ic：1.35V @ 15V, 60A
- Power - Max：540 W
- Switching Energy：1.4mJ (on), 3.5mJ (off)
- Input Type：Standard
- Gate Charge：230 nC
- Td (on/off) @ 25°C：31ns/320ns
- Test Condition：480V, 50A, 3Ohm, 15V
- Reverse Recovery Time (trr)：140 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-264-3, TO-264AA
- Supplier Device Package：TO-264 (IXGK)
- Grade：-
- Qualification：-
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Overview
The IXGK72N60A3H1 is a GenX3 series insulated gate bipolar transistor (IGBT) manufactured by IXYS. It features a single configuration with an integrated anti-parallel diode, housed in a TO-264-3 package for through-hole mounting. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 145 A at 25°C. Key electrical parameters include a saturation voltage of 1.95 V, a power dissipation rating of 830 W, and a maximum operating junction temperature of +150°C.
Feature Summary
- GenX3 technology optimized for low conduction losses
- Integrated fast recovery anti-parallel diode
- Robust thermal performance in standard through-hole packages
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency welding inverters
Procurement Notes
Verify the specific suffix 'A3H1' against the manufacturer's datasheet to confirm pinout and internal diode characteristics. Ensure the ordering documentation matches the exact part number to avoid substitution errors with similar GenX3 variants that may have different thermal or electrical ratings.
Selection Notes
Select this component for applications requiring high current handling in a single-switch topology. Compare the 1.95 V saturation voltage against system efficiency targets. Confirm that the TO-264-3 package dimensions fit the printed circuit board layout and that the heatsinking solution can manage the 830 W power dissipation limit under worst-case conditions.
Part Context
This IGBT belongs to the IXYS GenX3 family, designed for next-generation 600V power conversion. It complements lower-current modules like the IXGH series and higher-power discrete units, offering a balance of switching speed and current capacity for medium-power industrial electronics.
Replacement Considerations
Direct substitutes within the IXYS portfolio include the IXGX72N60A3H1 and IXGK72N60B3H1. Verify compatibility with external drivers when considering cross-manufacturer alternatives such as those from Infineon or Mitsubishi.
