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The IXGM17N100A is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes the second-generation HDMOSTM process to achieve low collector-emitter saturation voltage and high current handling capability. The device features a TO-247AD package with an isolated mounting screw hole for easy installation. Key electrical characteristics include a maximum collector-emitter voltage of 1000 V, a continuous collector current of 17 A, and a gate-emitter threshold voltage of up to 5 V. It operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix 'A' against the official datasheet to confirm pinout and thermal characteristics match your design requirements. Check for obsolete status or recommended new design alternatives as supply chains evolve. Ensure the TO-247AD package dimensions align with your PCB footprint and thermal management strategy before finalizing procurement.
Select this component for applications requiring robust high-voltage switching with efficient conduction. The TO-247AD package facilitates direct heatsink mounting via an isolated screw hole, simplifying mechanical assembly. Consider the 17 A continuous current rating relative to your peak load demands and ensure adequate gate drive circuitry supports the MOS input structure for optimal switching performance.
This IGBT belongs to the IXYS high-performance discrete transistor portfolio, leveraging proprietary HDMOSTM technology. It is designed for medium-power industrial and consumer electronics applications where reliability and thermal stability are critical. The component integrates standard packaging conventions for widespread compatibility in existing power electronic designs.
Consult the manufacturer's cross-reference guide for verified substitutes. Potential equivalents may include other 1000V, 17A IGBTs in TO-247 packages from compatible manufacturers, provided electrical parameters such as VCE(sat) and switching times meet system specifications.