IXGP20N120B3

Overview

The IXGP20N120B3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes silicon technology and is housed in a TO-220-3 package designed for through-hole mounting. The device features a maximum collector-emitter voltage (VCEO) of 1200 V and a continuous collector current (Ic) of 40 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.5 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 180 W. It operates within a temperature range from -55°C to +150°C.

Feature Summary

• High-voltage capability with a 1200 V collector-emitter breakdown voltage suitable for demanding power switching applications.
• Robust thermal performance allowing operation up to a maximum junction temperature of 150°C.
• Standardized TO-220-3 through-hole packaging facilitates easy integration into conventional circuit board layouts.

Applications

• Industrial motor drives and control systems
• Switch-mode power supplies (SMPS)
• Inverter circuits for renewable energy systems

Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm exact electrical characteristics and pinout compatibility. Ensure that the procurement channel provides valid traceability and authenticity guarantees for semiconductor components. Cross-reference the part number with the latest datasheet revisions to avoid discrepancies in technical specifications during sourcing.

Selection Notes

Select this component when a 1200 V rated IGBT with a 40 A continuous current capacity is required in a TO-220-3 package. Consider the 2.5 V saturation voltage for conduction loss calculations and verify that the thermal management solution supports the 180 W power dissipation limit at the intended operating junction temperature of 150°C.

Part Context

This IGBT belongs to the IXGP series from IXYS, which focuses on medium-power switching applications. The TO-220-3 form factor is widely used in general-purpose power electronics. It serves as a discrete switching element distinct from higher-current modules or lower-voltage MOSFET alternatives within the manufacturer's portfolio.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with any alternative devices by matching the 1200 V voltage rating, 40 A current capacity, TO-220-3 package dimensions, and electrical parameters such as Vce(sat) and switching speeds.