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Product Detailed Parameters
- Description：IGBT PT 1000V 16A TO-220-3
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1000 V
- Current - Collector (Ic) (Max)：16 A
- Current - Collector Pulsed (Icm)：32 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 8A
- Power - Max：54 W
- Switching Energy：2.3mJ (off)
- Input Type：Standard
- Gate Charge：26.5 nC
- Td (on/off) @ 25°C：15ns/600ns
- Test Condition：800V, 8A, 120Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The IXYS IXGP8N100 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage switching applications. It features a maximum collector-emitter voltage of 1000 V and a continuous collector current rating of 8 A at 25°C. The device utilizes silicon technology and is housed in a TO-220-3 through-hole package. Key electrical parameters include a collector-emitter saturation voltage of 2.7 V and a gate-emitter voltage range of -20 V to +20 V. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- High voltage blocking capability suitable for demanding power circuits
- Low saturation voltage for efficient conduction
- Robust thermal performance across wide operating ranges
Applications
- Motor drive inverters
- Switching power supplies
- Induction heating systems
Procurement Notes
Verify the specific revision status before procurement, as availability may vary by region. Confirm that the TO-220-3 lead frame configuration matches your PCB footprint requirements. Ensure that the thermal management design accounts for the specified junction temperature limits during operation.
Selection Notes
Select this component when a 1000V rated IGBT with moderate current handling is required in a standard through-hole package. Compare the 2.7V saturation voltage against alternative devices to ensure optimal efficiency for the target load current. Verify compatibility with standard gate drive voltages within the +/- 20V specification.
Part Context
This part belongs to the IXYS IXGP series of high-voltage IGBTs. It shares the same voltage class and packaging style as other members like the IXGP4N100 and IXGA8N100, differing primarily in current ratings and specific internal cell architecture optimizations for switching performance.
Replacement Considerations
Direct pin-compatible substitutes include the IXGP4N100 for lower current needs or the IXGA8N100 for surface mount equivalents. Verify that any replacement maintains the 1000V VCEO rating and compatible TO-220-3 mechanical dimensions.
