IXGR24N120C3D1

Overview

The IXYS IXGR24N120C3D1 is a high-speed N-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the GenX3 series. It features XPT technology for optimized switching performance and low conduction losses. The device is housed in a TO-247AD package with three pins for through-hole mounting. Key electrical ratings include a maximum collector-emitter voltage of 1200 V and a continuous collector current of 24 A at 25°C. The component supports a maximum power dissipation of 260 W and operates within a junction temperature range from -55°C to +175°C.

Feature Summary

• Utilizes GenX3 trench gate technology for enhanced switching speed and reduced switching losses.
• Incorporates XPT thin-wafer technology to achieve a superior balance between low saturation voltage and fast recovery characteristics.
• Designed for robust operation in high-voltage applications with a wide safe operating area.

Applications

• High-frequency motor drives and servo amplifiers
• Uninterruptible power supplies (UPS) and inverters
• Switched-mode power supplies (SMPS)
• Induction heating systems

Procurement Notes

Verify the specific suffix D1 against official datasheets to confirm tape-and-reel packaging requirements, as standard versions may differ. Ensure the supplier provides traceability documentation consistent with IXYS manufacturing standards. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and avoid counterfeit components.

Selection Notes

Select this component when designing circuits requiring 1200 V blocking capability with moderate current handling around 24 A. The TO-247AD package facilitates efficient heat sinking for thermal management. Consider the switching frequency limits defined by the GenX3 architecture when determining drive circuit requirements and snubber networks for optimal efficiency.

Part Context

This IGBT belongs to the IXYS IXGR series, which focuses on high-performance discrete switches for industrial power conversion. The GenX3 generation represents an advancement over previous trench technologies, offering improved ruggedness and lower figure-of-merit values compared to standard field-stop IGBTs in similar voltage classes.

Replacement Considerations

Direct pin-to-pin replacements within the same voltage and current class should be verified against updated IXYS portfolios. Alternative GenX3 variants with different current ratings or package styles may require schematic and thermal redesign. Consult official substitution guides for compatibility confirmation.