IXGR50N160H1

Description：IGBT NPT 1600V 75A ISOPLUS247
Series：-

SKU:96de51c77212 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 1600V 75A ISOPLUS247
Series：-
Mfr：IXYS
Package：Tube
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：1600 V
Current - Collector (Ic) (Max)：75 A
Current - Collector Pulsed (Icm)：330 A
Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 50A
Power - Max：240 W
Switching Energy：-
Input Type：Standard
Gate Charge：137 nC
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：230 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：ISOPLUS247™
Grade：-
Qualification：-

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IXGR50N160H1

Overview

The IXGR50N160H1 is a single NPT (Non-Punch-Through) IGBT manufactured by IXYS, designed for high-voltage power applications. It features a collector-emitter breakdown voltage of 1600 V and a continuous collector current rating of 75 A. The device is housed in an ISOPLUS247 through-hole package with a maximum power dissipation of 240 W. Operating temperature range spans from -55°C to +150°C junction temperature. This component belongs to the robust power transistor category suitable for industrial switching.

Feature Summary

Utilizes Non-Punch-Through (NPT) technology for stable high-voltage performance
Designed for rugged operation in demanding power electronic environments
Features ISOPLUS247 through-hole mounting for secure mechanical installation

Applications

Industrial motor drives
Uninterruptible power supplies (UPS)
High-frequency inverters

Procurement Notes

Verify component authenticity through authorized distributors due to potential counterfeit risks. Confirm datasheet revisions and specific testing conditions prior to integration. Ensure thermal management solutions align with the 240 W dissipation rating. Check for obsolescence notices as availability may vary across supply channels.

Selection Notes

Select this component when 1600 V blocking capability and 75 A continuous current are required. Consider the ISOPLUS247 package constraints for PCB layout and heatsinking. Evaluate switching losses against application frequency requirements. Compare alternative NPT technologies if higher current density or lower saturation voltage is needed.

Part Context

This IGBT is part of IXYS's portfolio of high-voltage power semiconductors. It serves as a critical switching element in medium-to-high power conversion systems. The NPT structure provides inherent short-circuit withstand capability, enhancing system reliability compared to punch-through designs in fault conditions.