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Product Detailed Parameters
- Description：IGBT 1200V 40A TO-268AA
- Series：-
- Mfr：IXYS
- Package：Box
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：3.4V @ 15V, 20A
- Power - Max：190 W
- Switching Energy：2.1mJ (off)
- Input Type：Standard
- Gate Charge：72 nC
- Td (on/off) @ 25°C：25ns/150ns
- Test Condition：960V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：40 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268AA
- Grade：-
- Qualification：-
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Overview
The IXGT20N120BD1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a 1200 V collector-emitter breakdown voltage and a continuous collector current of 20 A at 25°C. The device utilizes a TO-268AA surface-mount package, also known as D3PAK, with two leads plus a tab. Key electrical characteristics include a maximum gate-emitter voltage of ±20 V and an operating junction temperature range from -55°C to +150°C. The component incorporates an integrated anti-parallel fast recovery diode.
Feature Summary
- High-voltage switching capability with 1200 V blocking voltage for robust operation in demanding power environments.
- Integrated fast recovery anti-parallel diode simplifies circuit design by eliminating the need for external freewheeling components.
- Surface-mount construction in a TO-268AA package facilitates automated assembly and efficient thermal management via the exposed tab.
Applications
- Motor drive inverters
- Switch-mode power supplies
- Induction heating systems
Procurement Notes
Verify the specific suffix BD1 against the manufacturer's datasheet to confirm the presence of the integrated diode and exact pinout configuration. Ensure the procurement source provides original manufacturer documentation to validate authenticity. Confirm that the TO-268AA package dimensions match the target PCB footprint requirements before finalizing orders.
Selection Notes
Select this component when a high-voltage IGBT with an integrated freewheeling diode is required in a surface-mount form factor. The 1200 V rating suits applications exceeding standard 600 V or 650 V limits. Evaluate the thermal resistance of the TO-268AA package against the expected power dissipation to determine adequate heatsinking needs for the specific operating conditions.
Part Context
This device belongs to the IXGT series of high-voltage IGBTs produced by IXYS. The series is designed for general-purpose power switching applications requiring reliable performance under high voltage stress. The integration of the diode distinguishes it from standard single IGBTs, offering a compact solution for half-bridge configurations.
Replacement Considerations
Direct substitutes may include other IXYS IGBTs in the TO-268AA package with matching 1200 V ratings and integrated diodes. Cross-brand replacements require verification of pin compatibility, thermal characteristics, and electrical parameters such as saturation voltage and switching times.
