IXGX120N120B3

Overview

The IXGX120N120B3 is a GenX3™ silicon IGBT from IXYS, rated for 1.2 kV collector-emitter voltage and 120 A continuous collector current at 25°C. It features a TO-247AD-3 package with a maximum power dissipation of 830 W. The device exhibits a low saturation voltage of 2.2 V and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Utilizes IXYS GenX3™ technology for optimized switching performance
• Designed for high-power industrial applications requiring robust thermal handling
• Single configuration suitable for bridge rectifier or inverter topologies

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• High-frequency welding inverters

Procurement Notes

Verify the specific suffix 'B3' against the manufacturer's latest datasheet to confirm pinout compatibility and electrical characteristics. Ensure the ordering part number matches the exact package variant required for your PCB footprint. Cross-reference RoHS compliance status directly with official documentation before finalizing procurement orders.

Selection Notes

Select this component when designing circuits that demand high current capacity combined with low conduction losses. The TO-247AD-3 package facilitates efficient heat sinking for high-power density designs. Evaluate gate drive requirements against the specified maximum ratings to ensure reliable operation under varying load conditions.

Part Context

This device belongs to the IXGK/IXGH/IXGX series of high-power IGBTs manufactured by IXYS. These components are engineered for demanding power conversion environments. The GenX3™ architecture represents a specific generation of trench-gate technology designed to balance switching speed and conduction efficiency.

Replacement Considerations

Direct substitutes include IXGH120N120B3 and IXGK120N120B3. Verify package dimensions and thermal resistance values before substitution to ensure mechanical fit and adequate heat dissipation in the existing assembly.