IXGX72N60B3H1

Overview

The IXGX72N60B3H1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the GenX3 series, manufactured by IXYS. It features a 600V collector-emitter breakdown voltage and utilizes PT (Pseudo-Planar Technology) for optimized performance. The device supports a continuous collector current of 450A and a pulsed current of 720A. Key electrical parameters include a maximum collector-emitter saturation voltage of 1.7V at 25°C and a gate-emitter leakage current of 100nA. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Optimized for low conduction and switching losses in medium-speed applications
• Square Reverse Bias Safe Operating Area (RBSOA) for robust operation
• Integrated fast recovery anti-parallel diode
• Designed for switching frequencies between 5-40 kHz

Applications

• Induction heating systems
• High-frequency power supplies
• Motor drive inverters
• Resonant converters

Procurement Notes

Verify component authenticity through authorized IXYS distributors or certified suppliers. Request official datasheets and RoHS compliance documentation prior to purchase. Confirm package integrity and pin alignment against the SMDP-21 specification. Ensure storage conditions meet semiconductor handling standards to prevent moisture damage or electrostatic discharge before assembly.

Selection Notes

Select this IGBT for designs requiring high current capacity with low on-state voltage drop. The GenX3 technology provides superior switching characteristics compared to standard PT devices. Consider thermal management requirements due to the 520W power dissipation rating. Evaluate circuit inductance to ensure the square RBSOA remains within safe limits during transient events.

Part Context

This component belongs to the IXYS GenX3 family of medium-speed IGBTs. It combines XPT technology for reduced saturation voltage with advanced gate control for efficient switching. The part is designed to replace older generation IGBTs in high-power density applications where efficiency and thermal performance are critical design constraints.

Replacement Considerations

Direct substitutes may include other IXYS GenX3 series parts with similar voltage and current ratings. Verify pinout compatibility and thermal resistance values when cross-referencing with alternative manufacturers' offerings. Ensure that any replacement maintains the required reverse bias safe operating area specifications.

FAQ

What is the maximum junction temperature for the IXGX72N60B3H1?

The maximum operating junction temperature is +150°C.

Does this IGBT include an integrated diode?

Yes, the IXGX72N60B3H1 features an integrated fast recovery anti-parallel diode.