IXSH30N60BD1

Overview

The IXSH30N60BD1 is a HiPerFAST IGBT with an integrated diode manufactured by IXYS. It features a TO-247AD flange mount package with three terminals. Key electrical parameters include a maximum collector-emitter voltage of 600 V and a continuous collector current of 60 A. The device has a maximum fall time of 190 ns and a gate-emitter threshold voltage maximum of 5 V. The maximum gate-emitter voltage is rated at 20 V.

Feature Summary

• HiPerFAST technology for fast switching performance
• Integrated anti-parallel diode in single configuration
• Flange mount construction for efficient heat dissipation

Applications

• High frequency power conversion circuits
• Motor drive inverters
• Uninterruptible power supplies (UPS)

Procurement Notes

Verify the specific datasheet revision and manufacturing lot details upon procurement. Confirm that the TO-247AD package dimensions match the target PCB footprint. Check for any product change notifications regarding material composition or testing standards to ensure compliance with project requirements.

Selection Notes

Select this component when a 600V rating and 60A continuous current capability are required in a TO-247AD package. Consider the 190 ns fall time for switching frequency constraints. Ensure the thermal management solution supports the power dissipation characteristics defined in the official datasheet for the intended operating conditions.

Part Context

This part belongs to the IXYS HiPerFAST IGBT family, designed for high-efficiency power switching applications. It integrates a fast recovery diode to simplify circuit design in half-bridge configurations. The TO-247AD package provides robust mechanical mounting and thermal performance suitable for industrial power electronics.

Replacement Considerations

Direct substitutes may include other 600V 60A HiPerFAST IGBTs in TO-247AD packages from IXYS. Verify pinout compatibility and electrical parameter equivalence before substitution.