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Product Detailed Parameters
- Description：IGBT 1200V 70A TO-264AA
- Series：-
- Mfr：IXYS
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：70 A
- Current - Collector Pulsed (Icm)：140 A
- Vce(on) (Max) @ Vge, Ic：4V @ 15V, 35A
- Power - Max：300 W
- Switching Energy：10mJ (off)
- Input Type：Standard
- Gate Charge：150 nC
- Td (on/off) @ 25°C：80ns/400ns
- Test Condition：960V, 35A, 2.7Ohm, 15V
- Reverse Recovery Time (trr)：60 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-264-3, TO-264AA
- Supplier Device Package：TO-264AA (IXSK)
- Grade：-
- Qualification：-
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Overview
The IXSK35N120AU1 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS Corporation. It integrates a fast-recovery diode with a reverse recovery time of 35 nanoseconds. The device is designed for high-current switching applications, offering short-circuit safe operating area (SOA) capability. It utilizes silicon technology and is housed in a through-hole package suitable for robust industrial environments.
Feature Summary
- Integrates a 35-ns fast-recovery diode
- Provides short-circuit SOA capability
- Designed for high-current switching
Applications
- AC motor speed control
- DC servo and robot drives
- DC chopper circuits
- Uninterruptible power supplies (UPS)
- Switch-mode and resonant-mode power supplies
Procurement Notes
Verify the specific suffix AU1 against official IXYS documentation to confirm pinout and thermal characteristics. Ensure the component matches the required voltage and current ratings for the target application. Cross-reference the manufacturer's latest datasheet to confirm active status and compliance with relevant environmental standards before finalizing procurement.
Selection Notes
Select this IGBT for designs requiring integrated fast recovery diodes to minimize switching losses. Consider the short-circuit tolerance when designing protection circuits for motor drives or inverters. Evaluate the thermal resistance parameters relative to the heatsinking strategy to ensure junction temperatures remain within specified limits during continuous operation.
Part Context
IXYS Corporation specializes in power semiconductors and integrated circuits. The IXSK series represents their high-voltage IGBT lineup. This component belongs to a family of devices optimized for efficiency and reliability in power conversion systems. IXYS products are widely used in industrial and automotive sectors.
Replacement Considerations
Publicly confirmed substitute part numbers include IXSX35N120AU1 and IXSK35N120BD1. Verify electrical compatibility and pin configuration before substitution.
