IXSK40N60CD1

Description：IGBT 600V 75A TO-264AA
Series：-

SKU:35d19284846e Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 75A TO-264AA
Series：-
Mfr：IXYS
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：75 A
Current - Collector Pulsed (Icm)：150 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 40A
Power - Max：280 W
Switching Energy：1mJ (off)
Input Type：Standard
Gate Charge：190 nC
Td (on/off) @ 25°C：50ns/70ns
Test Condition：480V, 40A, 2.7Ohm, 15V
Reverse Recovery Time (trr)：35 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-264-3, TO-264AA
Supplier Device Package：TO-264AA (IXSK)
Grade：-
Qualification：-

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IXSK40N60CD1

Overview

The IXSK40N60CD1 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a collector-emitter breakdown voltage of 600V and a continuous collector current rating of 75A. The device supports a pulsed collector current of up to 200A and has a maximum power dissipation of 280W. It utilizes the TO-264 package for through-hole mounting. The component operates within a junction temperature range of -55°C to 150°C.

Feature Summary

Integrated anti-parallel fast recovery diode for efficient commutation
Guaranteed short-circuit safe operating area capability
Standard international package design for easy integration

Applications

High-frequency inverter circuits
Motor drive systems
Switched-mode power supplies

Procurement Notes

Verify the specific datasheet revision and manufacturer documentation before procurement, as component specifications may vary between production batches. Confirm that the TO-264 package dimensions align with the target PCB footprint and thermal management requirements. Ensure the supplier provides traceable origin records to guarantee authenticity and compliance with quality standards.

Selection Notes

Select this component for applications requiring robust short-circuit protection and high-frequency switching performance. The integrated diode simplifies circuit topology by eliminating the need for external freewheeling components. Evaluate the thermal resistance characteristics against the expected heat sink capacity to ensure reliable operation under continuous load conditions.

Part Context

This IGBT belongs to the IXYS portfolio of power semiconductor devices designed for industrial and automotive applications. It represents a standard solution for medium-power conversion tasks where reliability and compact packaging are prioritized. The device complements other discrete semiconductors in the manufacturer's catalog for complete power stage implementations.