IXSP10N60B2D1

$1.63

Description：IGBT PT 600V 20A TO-220-3
Series：-

SKU:c15887d02a61 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT PT 600V 20A TO-220-3
Series：-
Mfr：IXYS
Package：Bulk
IGBT Type：PT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：20 A
Current - Collector Pulsed (Icm)：30 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 10A
Power - Max：100 W
Switching Energy：430µJ (off)
Input Type：Standard
Gate Charge：17 nC
Td (on/off) @ 25°C：30ns/180ns
Test Condition：480V, 10A, 30Ohm, 15V
Reverse Recovery Time (trr)：25 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220-3
Grade：-
Qualification：-

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IXSP10N60B2D1

Overview

The IXSP10N60B2D1 is a high-speed Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a 600V collector-emitter voltage rating and a continuous collector current of 10A. The device utilizes a TO-220 package for through-hole mounting. Key electrical parameters include a maximum power dissipation of 150W, a saturation voltage of 2.5V at specified conditions, and a gate-emitter voltage range of -20V to +20V. It operates within a temperature range of -55°C to +150°C junction temperature.

Feature Summary

High-speed switching capability suitable for demanding applications
Integrated fast recovery diode for inductive load handling
Robust thermal performance with 150W power dissipation capacity

Applications

Motor drive inverters
Switched-mode power supplies
Induction heating systems

Procurement Notes

Verify component authenticity through authorized IXYS channels or certified distributors. Confirm the specific suffix D1 matches design requirements. Check RoHS compliance status against current regulatory standards. Validate datasheet revisions prior to integration. Ensure storage conditions maintain moisture sensitivity levels.

Selection Notes

Select this IGBT for circuits requiring 600V blocking voltage and moderate current handling up to 10A. Consider the TO-220 package for standard PCB mounting. Evaluate thermal management needs based on the 150W dissipation limit. Compare switching speeds against alternative high-speed IGBTs if frequency constraints exist.

Part Context

This component belongs to the IXYS high-speed IGBT family, designed for efficient power conversion. It combines N-channel MOSFET input with bipolar output characteristics. The series targets applications needing rapid switching transitions and reliable operation under varying thermal loads.

Replacement Considerations

Direct substitutes may include other IXYS high-speed IGBTs with matching 600V ratings and TO-220 packages. Verify pinout compatibility and electrical parameters before substitution.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.