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IXTA90N15T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 150V 90A TO263. Review the specifications below when checking this part for your BOM.
The IXTA90N15T is a single N-channel silicon power MOSFET from IXYS, housed in a TO-263AB (D2PAK) surface-mount package. It features a drain-source breakdown voltage of 15 V and a continuous drain current rating of 90 A. The device exhibits a maximum on-resistance of 4.8 mΩ at a gate-source voltage of 10 V. Key switching parameters include a typical turn-on delay time of 19 ns, a fall time of 19 ns, and a rise time of 30 ns. The component supports a maximum power dissipation of 455 W and operates within a temperature range of -55°C to +175°C.
Verify the specific suffix and revision level against the manufacturer's latest datasheet to ensure compatibility with design specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as availability may vary by region and production cycle.
Select this component when a low-voltage, high-current solution is required with minimal conduction loss. The TO-263AB package facilitates thermal management through direct PCB mounting. Ensure the gate drive circuit can handle the specified threshold voltage and charge requirements for optimal switching efficiency.
This part belongs to the IXTA series of power MOSFETs from IXYS, designed for general-purpose power switching applications. The series emphasizes low on-resistance and fast switching characteristics suitable for modern power electronics designs.
Check for pin-compatible alternatives within the same IXYS IXTA series or comparable devices from other manufacturers offering similar 15V/90A specifications. Verify that substitute parts meet the same thermal and electrical performance criteria.
The maximum operating temperature is +175°C.
Yes, as a standard discrete N-channel MOSFET, it includes an intrinsic body diode.
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