Single FETs, MOSFETs IXTA90N15T product image

IXTA90N15T

$1.89
  • Description:MOSFET N-CH 150V 90A TO263
  • Series:Trench
  • Mfr:IXYS
  • Package:Tube

SKU:d4fe9061f86a Category: Brand:

  
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IXTA90N15T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 150V 90A TO263. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXTA90N15T

  • Description:MOSFET N-CH 150V 90A TO263
  • Series:Trench
  • Mfr:IXYS
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):150 V
  • Current - Continuous Drain (Id) @ 25°C:90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:20mOhm @ 45A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:4100 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):455W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-263AA
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IXTA90N15T

IXTA90N15T

Single FETs, MOSFETs Overview

The IXTA90N15T is a single N-channel silicon power MOSFET from IXYS, housed in a TO-263AB (D2PAK) surface-mount package. It features a drain-source breakdown voltage of 15 V and a continuous drain current rating of 90 A. The device exhibits a maximum on-resistance of 4.8 mΩ at a gate-source voltage of 10 V. Key switching parameters include a typical turn-on delay time of 19 ns, a fall time of 19 ns, and a rise time of 30 ns. The component supports a maximum power dissipation of 455 W and operates within a temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

  • Utilizes Trench Gate technology for enhanced switching performance and low conduction losses.
  • Designed as an enhancement mode device with high forward transconductance for efficient drive requirements.
  • Features a robust single N-channel configuration integrated into a standard D2PAK surface-mount footprint.

Single FETs, MOSFETs Applications

  • High-efficiency DC-DC converter circuits
  • Motor control systems requiring fast switching speeds
  • Power supply units for industrial equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix and revision level against the manufacturer's latest datasheet to ensure compatibility with design specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as availability may vary by region and production cycle.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage, high-current solution is required with minimal conduction loss. The TO-263AB package facilitates thermal management through direct PCB mounting. Ensure the gate drive circuit can handle the specified threshold voltage and charge requirements for optimal switching efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the IXTA series of power MOSFETs from IXYS, designed for general-purpose power switching applications. The series emphasizes low on-resistance and fast switching characteristics suitable for modern power electronics designs.

Single FETs, MOSFETs Replacement Considerations

Check for pin-compatible alternatives within the same IXYS IXTA series or comparable devices from other manufacturers offering similar 15V/90A specifications. Verify that substitute parts meet the same thermal and electrical performance criteria.

Single FETs, MOSFETs FAQ

What is the maximum operating junction temperature for the IXTA90N15T?

The maximum operating temperature is +175°C.

Does the IXTA90N15T have an intrinsic body diode?

Yes, as a standard discrete N-channel MOSFET, it includes an intrinsic body diode.

IXTA90N15TIXTA90N15T
$1.89
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