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IXTF2N300P3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 3000V 1.6A I4PAC. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IXTF2N300P3
- Description：MOSFET N-CH 3000V 1.6A I4PAC
- Series：Polar P3™
- Mfr：IXYS
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：3000 V
- Current - Continuous Drain (Id) @ 25°C：1.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：21Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：73 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1890 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：160W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：ISOPLUS i4-PAC™
- Package / Case：ISOPLUSi5-PAK™
Single FETs, MOSFETs datasheet and documents for IXTF2N300P3
Single FETs, MOSFETs Overview
The IXTF2N300P3 is an N-channel enhancement mode Power MOSFET from the IXYS Polar3 series. It features a 3000 V drain-source voltage rating and a continuous drain current of 2 A at case temperature. The device utilizes Silicon technology in an ISOPLUS-i4-PAK-3 through-hole package with three pins. Key electrical parameters include a maximum on-resistance of 15 Ohms, a gate-source voltage limit of ±20 V, and a power dissipation capacity of 75 W. It operates within a junction temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- High blocking voltage capability for demanding high-voltage applications
- Enhanced mode operation with low gate drive requirements
- Robust construction using silicon chip on direct-copper bond substrate
- Isolated mounting surface providing electrical safety
Single FETs, MOSFETs Applications
- Switched-mode power supplies
- Resonant-mode power supplies
- Uninterruptible power supplies (UPS)
- Capacitor discharge circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix P3 against official datasheets to confirm package type and pinout compatibility. Ensure thermal management solutions align with the 75 W dissipation rating. Confirm RoHS compliance status via manufacturer documentation before integration into regulated assemblies.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high voltage isolation with moderate current handling. Compare the 15 Ohm on-resistance against circuit loss tolerances. Verify that the ISOPLUS-i4-PAK-3 package fits the available board space and mounting constraints for through-hole implementation.
Single FETs, MOSFETs Part Context
This part belongs to the Polar3 family of high-voltage MOSFETs designed for efficiency and reliability. It complements other devices like the IXTF6N200P3 by offering higher voltage ratings suitable for specialized industrial and power conversion systems where standard low-voltage components are insufficient.
Single FETs, MOSFETs Replacement Considerations
Check for cross-reference availability from distributors. Verify pinout compatibility if substituting with similar high-voltage MOSFETs. Ensure replacement parts meet the same voltage and current derating requirements.
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