IXTH16N20D2

Single FETs, MOSFETs Overview

The Littelfuse IXTH16N20D2 is an N-channel depletion mode power MOSFET from the D2 Series, housed in a TO-247 package. It features a drain-source breakdown voltage of 200 V and a continuous drain current of 16 A at 25°C. The device exhibits a maximum on-resistance (RDS(on)) of 80 milliohms and supports a power dissipation of 695 W. Operating temperatures range from -55°C to +150°C junction temperature.

Single FETs, MOSFETs Feature Summary

• Normally-on operation characteristic inherent to depletion mode design
• Linear mode tolerant for stable performance under varying load conditions
• Low RDS(on) for efficient conduction with minimal power loss
• UL 94 V-0 flammability qualified molding compound

Single FETs, MOSFETs Applications

• Industrial motor control systems
• Power supply circuits requiring normally-on topology
• High-frequency switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'D2' against official Littelfuse documentation to confirm pinout and thermal characteristics. Ensure the component meets RoHS compliance requirements if mandated by your assembly standards. Cross-reference the datasheet revision date to validate parameter accuracy before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a normally-on (depletion mode) N-channel MOSFET is required rather than standard enhancement mode devices. Consider the 200 V rating and 16 A current capacity for medium-power industrial loads. Evaluate the TO-247 package suitability for through-hole mounting and heat sinking needs in high-dissipation environments.

Single FETs, MOSFETs Part Context

This part belongs to Littelfuse's D2 Series of N-channel depletion mode power MOSFETs, rated from 100 V to 1700 V. These components are designed for robust industrial applications where fail-safe or normally-conducting states are necessary. The series emphasizes linear mode tolerance and low on-resistance for efficient power management.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the depletion mode characteristic, 200 V rating, and TO-247 package. Verify that any alternative maintains the same gate threshold behavior and thermal resistance profile to ensure circuit compatibility without redesign.