IXTY2N60P

Single FETs, MOSFETs Overview

The IXTY2N60P is a single N-channel enhancement mode Power MOSFET manufactured by IXYS. It utilizes silicon technology and belongs to the Polar series. The device features a D-PAK (TO-252) surface-mount package with three terminals. Key electrical specifications include a drain-source breakdown voltage (Vds) of 600 V, a continuous drain current (Id) of 2 A, and a maximum on-resistance (Rds(on)) of 1.6 Ohms. The gate-source voltage range is specified from -30 V to +30 V. Thermal performance includes a power dissipation rating of 4 W at 25°C case temperature, with an operating junction temperature range spanning from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Single N-channel enhancement mode configuration for discrete switching applications
• Avalanche-rated capability for robustness against inductive load transients
• Fast intrinsic body diode characteristics for efficient commutation
• Surface-mount D-PAK packaging optimized for automated assembly

Single FETs, MOSFETs Applications

• High-voltage DC-DC converter circuits
• Motor control systems requiring low-current switching
• Power supply output stages
• General-purpose high-voltage switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix designation against the manufacturer's official datasheet to confirm exact pinout and thermal characteristics. Ensure that the selected component meets RoHS compliance requirements if mandated by the target application standards. Cross-reference the package outline dimensions with PCB footprint libraries prior to finalizing design implementation to prevent mechanical interference.

Single FETs, MOSFETs Selection Notes

Select this component when a 600 V blocking capability is required alongside a low continuous current rating of 2 A. The relatively high on-resistance makes it suitable for low-power or intermittent duty cycles rather than high-efficiency continuous conduction. Evaluate the thermal resistance of the D-PAK package relative to the expected ambient conditions and heat sinking strategy to ensure junction temperatures remain within safe operational limits during peak loads.

Single FETs, MOSFETs Part Context

This part belongs to IXYS' Polar series of high-voltage MOSFETs, designed for general-purpose power switching. The series emphasizes reliability and avalanche ruggedness. The IXTY variant specifically denotes the surface-mount D-PAK form factor, distinguishing it from through-hole equivalents like the IXTQ or IXTH series. It serves as a compact solution for space-constrained designs requiring moderate voltage isolation.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other 600 V, 2 A N-channel MOSFETs in D-PAK packages from manufacturers such as Vishay or ON Semiconductor. Verify that replacement parts match the Rds(on), Qg, and thermal resistance specifications to maintain circuit performance. Check for pin-to-pin compatibility before integrating alternative components into existing layouts.