IXXH140N65C4

Overview

The IXXH140N65C4 is a silicon N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It belongs to the GenX4™ technology family, utilizing Extreme Light Punch Through (XPT™) wafer technology to optimize switching performance and conduction losses. The device features a TO-247AD-3 through-hole package with a single configuration. Key electrical parameters include a collector-emitter breakdown voltage of 650 V and a continuous collector current rating of 140 A at 25°C. The saturation voltage is typically 2.1 V, supporting power dissipation up to 880 W. It operates within a junction temperature range of -55°C to +175°C.

Feature Summary

• GenX4™ trench gate technology for optimized switching characteristics
• XPT™ wafer design enabling low saturation voltage and high short-circuit capability
• Square Reverse Bias Safe Operating Area (RBSOA)
• High power density suitable for high-frequency applications

Applications

• Power inverters and UPS systems
• Motor drives and servo amplifiers
• Switched-mode power supplies (SMPS)
• Battery chargers and PFC circuits
• Welding machines and lamp ballasts

Procurement Notes

Verify component authenticity against official IXYS datasheets before integration. Confirm that the specific ordering suffix matches the required pinout and thermal specifications. Ensure supplier documentation provides traceability to the manufacturer's original production records. Cross-reference RoHS compliance status with current regulatory requirements for the target market.

Selection Notes

Select this component for designs requiring high current handling in the 650V class. The 140A rating supports robust load conditions in industrial converters. Evaluate thermal management capabilities to maintain junction temperatures within the specified limits during peak operation. Consider the gate drive requirements associated with the GenX4™ architecture for optimal efficiency.

Part Context

This part is part of the IXYS IXXH series, which utilizes XPT™ technology for improved performance over standard IGBTs. It serves as a high-current alternative within the 650V discrete IGBT portfolio, designed for demanding power conversion applications where reliability and efficiency are critical.

Replacement Considerations

Direct substitutes may include other IXYS GenX4™ devices with similar current ratings, such as the IXXH110N65C4 or IXXH160N65C4, provided pin compatibility and thermal constraints are met. Verify electrical parameters against the specific application requirements before substitution.