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The IXXH75N60B3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT technology and belongs to the GenX3 series, designed for medium-speed switching applications between 5 kHz and 40 kHz. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 75 A at 110°C case temperature. It is housed in a TO-247 package with through-hole mounting.
This component is part of the IXYS IXXH75N60 product family, which includes variants such as IXXH75N60C3 and IXXH75N60B3D1. These devices share similar electrical ratings but may differ in specific package configurations or integrated diode options. The IXXH75N60B3 specifically denotes the standard single IGBT configuration without an integrated anti-parallel diode.
Direct replacements include IXXH75N60B3D1, which offers identical electrical specifications but includes an integrated fast recovery diode. Designers must verify pinout compatibility and thermal resistance requirements when substituting these models.