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The IXXK100N60C3H1 is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT and GenX3 technologies to optimize switching performance for high-frequency applications. The device features a TO-264AA (TO-264-3) through-hole package with three terminals. Key electrical specifications include a maximum collector-emitter voltage of 600 V and a continuous collector current of 200 A at 25°C. The saturation voltage is specified as 1.8 V max at 70 A with a 15 V gate drive. Maximum power dissipation is rated at 695 W, with an operating junction temperature range from -55°C to +150°C.
Verify the specific suffix against official IXYS documentation to confirm exact electrical tolerances and packaging variations. Ensure compatibility with existing thermal management solutions given the 695 W dissipation rating. Confirm RoHS compliance status via the manufacturer's latest datasheet before integration into regulated products.
Select this component for circuits requiring 600 V blocking capability and moderate current handling up to 200 A. The TO-264 package suits board-mounted designs needing robust mechanical stability. Evaluate thermal resistance requirements carefully to maintain junction temperatures within the specified -55°C to +150°C operational window during peak load conditions.
This part belongs to the IXYS IXXK series of high-power IGBTs. It shares the XPT and GenX3 technological foundation with other devices in the lineup but is distinguished by its specific current rating and TO-264AA physical form factor. It serves as a discrete solution for medium-power industrial applications where discrete module flexibility is preferred over integrated modules.
Direct replacements must match the 600V/200A specification and TO-264AA footprint. Verify that alternative components support similar switching frequencies and have compatible gate threshold voltages to ensure circuit stability without redesigning the driver stage.