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The IXXX200N60B3 is a single-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT and GenX3 technologies to achieve a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 200 A at 25°C. The device features a maximum saturated collector-emitter voltage of 1.7 V when driven with a gate-emitter voltage of 15 V at a collector current of 100 A. Packaged in a TO-264 form factor, it supports screw mounting and operates within a junction temperature range of -55°C to 175°C.
Verify the specific datasheet revision and ordering suffixes to ensure compatibility with existing designs. Confirm that the TO-264 package dimensions match the intended heatsink interface. Check for any recent Product Change Notifications (PCNs) regarding material or manufacturing site updates before finalizing procurement orders.
Select this component for circuits requiring a 600 V blocking capability with a 200 A current handling capacity. Ensure the gate driver can supply sufficient current to manage the input capacitance effectively. Verify that the thermal resistance characteristics align with the system's cooling strategy to maintain junction temperatures within the specified 175°C limit during peak load operations.
This part belongs to the IXYS IGBT portfolio utilizing XPT technology, which extends the tail current to reduce switching losses. The GenX3 generation further optimizes the trench gate structure for improved ruggedness. It serves as a discrete solution for medium-to-high power conversion systems where modular packaging is not strictly required.
Direct substitutes include the IXXK200N60B3 and IXXN200N60B3, which share similar electrical ratings but may differ in package type or specific thermal characteristics. Always cross-reference pinouts and mechanical drawings before swapping components to prevent board layout conflicts.