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The IXXX200N60C3 is a single-channel silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS GenX5 XPT series. It features a TO-264 package with a maximum collector-emitter voltage of 600 V and a continuous collector current of 200 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 1.6 V and a maximum gate-emitter voltage rating of ±20 V. Operating within a junction temperature range of -55°C to +150°C, it utilizes XPT technology for optimized performance in high-power switching applications.
Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm the specific suffix C3 corresponds to the required packaging and compliance standards. Request original manufacturer datasheets and test reports to validate electrical parameters against design specifications before integration into production lines.
Select this component for applications requiring robust 600V blocking capability with moderate current handling. Ensure thermal management solutions accommodate the specified power dissipation limits. Compare gate charge requirements against available driver capabilities to optimize switching speed and minimize losses in the target circuit topology.
This device belongs to the IXYS IXXN/IXXX200N60 family, representing fifth-generation trench IGBTs. It shares the XPT technology platform with other models in the series but differs in package configuration and specific current ratings. The product line targets industrial power conversion markets demanding reliability and efficiency.
Direct pin-compatible substitutes within the same IXYS family include IXXN200N60C3H1 and IXXN200N60B3. Verify thermal resistance and exact current derating curves when cross-referencing with these alternatives to ensure system compatibility.