IXYA8N250CHV

Overview

The IXYA8N250CHV is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT technology and features a TO-263HV surface-mount package. The device supports a maximum collector-emitter voltage of 2500 V and a continuous collector current of 8 A at 25°C. Key electrical parameters include a saturation voltage of 4.1 V, a gate-emitter voltage range of ±20 V, and a power dissipation capacity of 280 W. It operates within a temperature range of -55°C to +175°C.

Feature Summary

• Utilizes IXYS XPT technology for optimized high-voltage performance
• Designed for surface-mount installation in compact power circuits
• Single configuration suitable for high-voltage switching applications

Applications

• High-voltage industrial motor drives
• Uninterruptible power supply systems
• High-frequency welding equipment

Procurement Notes

Verify the specific suffix 'HV' and package type against official datasheets to ensure compatibility with high-voltage PCB layouts. Confirm that thermal management solutions meet the 280 W dissipation requirements. Cross-reference manufacturer part numbers to avoid confusion with similar series components.

Selection Notes

Select this component for applications requiring robust 2500 V blocking capability in a surface-mount form factor. Consider the trade-off between the 8 A continuous current rating and the 280 W power dissipation limit when designing heat sinks. Ensure gate drive voltages remain within the specified ±20 V limits to prevent device damage.

Part Context

This IGBT belongs to IXYS's high-voltage XPT product line, designed for demanding power electronics. It complements other TO-263 packaged devices like the IXYX40N250CHV, offering a balance of voltage rating and current handling for space-constrained high-voltage designs.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.