IXYH120N65B3

Overview

The IXYH120N65B3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from IXYS, belonging to the XPT™ and GenX3™ product series. It features a collector-emitter voltage of 650V and a continuous collector current of 340A at case temperature. The device is housed in a TO-247 (IXYH) through-hole package with three pins. Key electrical parameters include a maximum power dissipation of 1360W, a typical on-state voltage of 1.8V at 36A, and switching times of 27ns turn-on and 150ns turn-off. It operates within a junction temperature range of -55°C to 175°C.

Feature Summary

• Utilizes XPT™ technology for optimized square Reverse Bias Safe Operating Area (RBSOA).
• Integrates ultra-fast anti-parallel diodes for efficient commutation.
• Features short-circuit capability for enhanced system robustness.
• Designed for mid- and high-switching frequency applications.

Applications

• Industrial motor drives
• Switch-mode power supplies
• DC-AC inverters

Procurement Notes

Verify the specific datasheet version and mechanical dimensions against the latest Littelfuse/IXYS documentation before integration. Confirm that the TO-247 (IXYH) footprint matches the target PCB layout. Ensure thermal management solutions account for the 1360W dissipation rating under appropriate cooling conditions. Check for any recent Product Change Notifications regarding material or manufacturing site updates.

Selection Notes

Select this component for applications requiring high current handling and robust safe operating area characteristics. The integrated fast diode simplifies circuit design by eliminating the need for external freewheeling diodes in many topologies. Consider the 650V blocking voltage and 340A current capacity relative to the peak load requirements. Evaluate the switching speed trade-offs between conduction loss and switching loss for the specific frequency range.

Part Context

This IGBT belongs to the XPT™ GenX3™ family, which represents an evolution in planar trench technology. It is designed to replace previous generations of IGBTs offering improved efficiency and reliability. The part is manufactured by IXYS Corporation, now part of Littelfuse, focusing on power management semiconductors. It serves as a discrete solution for medium-power conversion systems.

Replacement Considerations

Direct substitutes may include other 650V, 340A IGBTs in TO-247 packages from IXYS/Littelfuse, such as the IXYH120N65B3 variants with different packaging suffixes if available. Cross-brand replacements require careful verification of pinout compatibility, Vce(sat), and switching energy values to ensure circuit performance remains within specifications.