IXYH120N65C3

IXYH120N65C3

$6.42
  • Description:IGBT PT 650V 260A TO-247
  • Series:XPT™, GenX3™

SKU:b0bf2e19e87c Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT PT 650V 260A TO-247
  • Series:XPT™, GenX3™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:PT
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):260 A
  • Current - Collector Pulsed (Icm):620 A
  • Vce(on) (Max) @ Vge, Ic:2.8V @ 15V, 100A
  • Power - Max:1360 W
  • Switching Energy:1.25mJ (on), 500µJ (off)
  • Input Type:Standard
  • Gate Charge:265 nC
  • Td (on/off) @ 25°C:28ns/127ns
  • Test Condition:400V, 50A, 2Ohm, 15V
  • Reverse Recovery Time (trr):29 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247 (IXYH)
  • Grade:-
  • Qualification:-

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IXYH120N65C3

Overview

The IXYH120N65C3 is a single N-channel Power IGBT manufactured by IXYS, utilizing XPT and GenX3 technologies. It features a TO-247-3 through-hole package with a maximum collector-emitter voltage of 650 V and a continuous collector current of 260 A at 25°C. The device has a maximum power dissipation of 1360 W and an on-state collector-emitter saturation voltage of 2.8 V at 15 V gate drive and 100 A. Switching characteristics include a turn-on energy of 1.25 mJ and turn-off energy of 500 µJ under test conditions of 400 V, 50 A, 2 Ω, and 15 V. The junction temperature range spans from -55°C to +175°C.

Feature Summary

  • Incorporates XPT (eXtended Plateau Technology) for optimized trade-offs between conduction losses and switching performance.
  • Utilizes GenX3 technology to achieve high current density and robust short-circuit withstand capability.
  • Designed for low on-state voltage drop to minimize conduction losses in high-power applications.

Applications

  • Industrial motor drives and inverters
  • High-frequency power supplies
  • Uninterruptible power supply (UPS) systems

Procurement Notes

Verify the manufacturer part number against official IXYS documentation to ensure authenticity. Confirm that the component meets RoHS3 compliance standards as specified in the datasheet. Check for any specific handling requirements related to its sensitivity to electrostatic discharge during storage and assembly processes.

Selection Notes

Select this component for designs requiring high current capacity up to 260 A and operation at voltages up to 650 V. Ensure the thermal management system can handle the 1360 W power dissipation limit. Verify that the gate drive circuit provides the required 15 V level to achieve the specified saturation voltage and switching energies.

Part Context

This device belongs to the IXYS IXYH series of discrete IGBTs, specifically designed for medium to high-power industrial applications. It represents the integration of XPT and GenX3 technologies within a standard TO-247 package, offering a balance of performance and ease of mounting compared to larger module formats.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided source data. When evaluating alternatives, compare key parameters such as Vceo, Ic, Vce(sat), and switching energies. Ensure the replacement package matches the TO-247-3 footprint and pinout configuration.

IXYH120N65C3IXYH120N65C3
$6.42
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