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The IXYH120N65C3 is a single N-channel Power IGBT manufactured by IXYS, utilizing XPT and GenX3 technologies. It features a TO-247-3 through-hole package with a maximum collector-emitter voltage of 650 V and a continuous collector current of 260 A at 25°C. The device has a maximum power dissipation of 1360 W and an on-state collector-emitter saturation voltage of 2.8 V at 15 V gate drive and 100 A. Switching characteristics include a turn-on energy of 1.25 mJ and turn-off energy of 500 µJ under test conditions of 400 V, 50 A, 2 Ω, and 15 V. The junction temperature range spans from -55°C to +175°C.
Verify the manufacturer part number against official IXYS documentation to ensure authenticity. Confirm that the component meets RoHS3 compliance standards as specified in the datasheet. Check for any specific handling requirements related to its sensitivity to electrostatic discharge during storage and assembly processes.
Select this component for designs requiring high current capacity up to 260 A and operation at voltages up to 650 V. Ensure the thermal management system can handle the 1360 W power dissipation limit. Verify that the gate drive circuit provides the required 15 V level to achieve the specified saturation voltage and switching energies.
This device belongs to the IXYS IXYH series of discrete IGBTs, specifically designed for medium to high-power industrial applications. It represents the integration of XPT and GenX3 technologies within a standard TO-247 package, offering a balance of performance and ease of mounting compared to larger module formats.
Direct substitutes are not explicitly listed in the provided source data. When evaluating alternatives, compare key parameters such as Vceo, Ic, Vce(sat), and switching energies. Ensure the replacement package matches the TO-247-3 footprint and pinout configuration.