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The IXYS IXYH50N120C3 is a high-speed N-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the GenX3™ series with XPT™ technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 100 A at 25°C. The device operates in a PLUS247 through-hole package with a maximum power dissipation of 1150 W. Key electrical parameters include a saturation voltage of 3.5 V, a gate-emitter voltage range of ±20 V, and a switching speed capability up to 50 kHz. The junction temperature range spans from -55°C to +175°C.
Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm manufacturing date codes and lot traceability against current quality standards. Ensure packaging integrity remains intact during transit to prevent mechanical damage to the leads. Request original datasheets and test reports to validate technical specifications prior to integration into production lines.
Select this component for designs requiring 1200 V blocking capability with moderate current handling. Evaluate thermal resistance requirements carefully given the 1150 W dissipation rating. Compare switching losses against alternative GenX3 variants if higher frequency operation is necessary. Ensure gate drive circuits support the specified ±20 V limits for reliable triggering.
This discrete IGBT belongs to the IXYS GenX3™ family, which utilizes trench gate technology combined with XPT™ buffer layers. The PLUS247 package provides a standardized footprint for high-power modules. This specific model targets applications balancing voltage stress with switching speed requirements in medium-power industrial electronics.
Direct substitute: IXYH50N120C3. Verify pinout compatibility and thermal characteristics when considering cross-brand alternatives.