IXYH50N120C3

IXYH50N120C3

$10.95
  • Description:IGBT 1200V 100A TO-247
  • Series:GenX3™, XPT™

SKU:ff897506c63f Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 1200V 100A TO-247
  • Series:GenX3™, XPT™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):100 A
  • Current - Collector Pulsed (Icm):240 A
  • Vce(on) (Max) @ Vge, Ic:3.5V @ 15V, 50A
  • Power - Max:750 W
  • Switching Energy:3mJ (on), 1mJ (off)
  • Input Type:Standard
  • Gate Charge:142 nC
  • Td (on/off) @ 25°C:28ns/133ns
  • Test Condition:600V, 50A, 5Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247 (IXYH)
  • Grade:-
  • Qualification:-

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IXYH50N120C3

Overview

The IXYS IXYH50N120C3 is a high-speed N-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the GenX3™ series with XPT™ technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 100 A at 25°C. The device operates in a PLUS247 through-hole package with a maximum power dissipation of 1150 W. Key electrical parameters include a saturation voltage of 3.5 V, a gate-emitter voltage range of ±20 V, and a switching speed capability up to 50 kHz. The junction temperature range spans from -55°C to +175°C.

Feature Summary

  • Incorporates XPT™ technology for optimized performance in high-voltage applications
  • Features GenX3™ architecture designed for high-speed switching operations
  • Provides robust thermal management capabilities within the PLUS247 package

Applications

  • High-frequency power conversion systems
  • Industrial motor drive inverters
  • Uninterruptible power supply (UPS) units

Procurement Notes

Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm manufacturing date codes and lot traceability against current quality standards. Ensure packaging integrity remains intact during transit to prevent mechanical damage to the leads. Request original datasheets and test reports to validate technical specifications prior to integration into production lines.

Selection Notes

Select this component for designs requiring 1200 V blocking capability with moderate current handling. Evaluate thermal resistance requirements carefully given the 1150 W dissipation rating. Compare switching losses against alternative GenX3 variants if higher frequency operation is necessary. Ensure gate drive circuits support the specified ±20 V limits for reliable triggering.

Part Context

This discrete IGBT belongs to the IXYS GenX3™ family, which utilizes trench gate technology combined with XPT™ buffer layers. The PLUS247 package provides a standardized footprint for high-power modules. This specific model targets applications balancing voltage stress with switching speed requirements in medium-power industrial electronics.

Replacement Considerations

Direct substitute: IXYH50N120C3. Verify pinout compatibility and thermal characteristics when considering cross-brand alternatives.

IXYH50N120C3IXYH50N120C3
$10.95
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