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Product Detailed Parameters
- Description：IGBT 1200V 310A PLUS264
- Series：XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：310 A
- Current - Collector Pulsed (Icm)：740 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 110A
- Power - Max：1360 W
- Switching Energy：3.6mJ (on), 1.9mJ (off)
- Input Type：Standard
- Gate Charge：330 nC
- Td (on/off) @ 25°C：40ns/320ns
- Test Condition：600V, 50A, 2Ohm, 15V
- Reverse Recovery Time (trr)：48 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-264-3, TO-264AA
- Supplier Device Package：PLUS264™
- Grade：-
- Qualification：-
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Overview
The IXYK110N120C4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT thin-wafer technology and belongs to the 4th generation Trench IGBT series. The device features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 310 A at 25°C. Its collector-emitter saturation voltage is specified at 2.4 V, with a power dissipation rating of 1.36 kW. The component operates within a temperature range of -55°C to +175°C and is housed in a TO-247-3 through-hole package.
Feature Summary
- Incorporates XPT thin-wafer technology for optimized performance characteristics.
- Utilizes 4th generation Trench IGBT architecture for enhanced switching efficiency.
- Designed for high-power applications requiring robust thermal stability.
Applications
- High-frequency power conversion systems
- Industrial motor drive inverters
- Uninterruptible power supply (UPS) units
Procurement Notes
Verify the specific manufacturer datasheet for the IXYK110N120C4 to confirm all electrical parameters and mechanical dimensions before integration. Ensure that the ordering suffix matches the required packaging configuration. Cross-reference official component documentation to validate compatibility with existing circuit designs and thermal management requirements.
Selection Notes
Select this component based on its 1200 V blocking capability and 310 A current handling capacity. Evaluate the 2.4 V saturation voltage against system conduction loss targets. Confirm that the TO-247-3 package aligns with the available board space and mounting constraints. Assess thermal resistance values to ensure adequate heat sinking for the intended operating environment.
Part Context
This part belongs to the IXYS XPT Gen 4 IGBT family, which focuses on high-voltage silicon devices. These transistors are engineered for demanding power electronics environments. The series emphasizes reliability and efficiency in medium to high-power industrial applications.
Replacement Considerations
Consult official IXYS substitution guides or distributor cross-reference tools for verified equivalent parts. Do not assume functional interchangeability with other 1200 V IGBTs without validating pinout and parameter alignment.
