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Product Detailed Parameters
- Description：IGBT 1200V 240A TO-264
- Series：GenX3™, XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：240 A
- Current - Collector Pulsed (Icm)：700 A
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 120A
- Power - Max：1500 W
- Switching Energy：6.75mJ (on), 5.1mJ (off)
- Input Type：Standard
- Gate Charge：412 nC
- Td (on/off) @ 25°C：35ns/176ns
- Test Condition：600V, 100A, 1Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-264-3, TO-264AA
- Supplier Device Package：TO-264 (IXYK)
- Grade：-
- Qualification：-
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Overview
The IXYS IXYK120N120C3 is a high-speed N-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the GenX3 and XPT product families. It features a 1200 V collector-emitter voltage rating and supports a maximum continuous collector current of 120 A at 25°C. The device utilizes a TO-264AA (PLUS264) through-hole package, providing robust thermal management with a junction-to-case thermal resistance of 0.25 °C/W. Designed for high-frequency applications up to 50 kHz, it incorporates soft-flying-stop technology to minimize switching losses and electromagnetic interference.
Feature Summary
- GenX3 and XPT technology integration for optimized switching performance
- Soft-flying-stop characteristic reducing switching noise and stress
- High thermal conductivity via PLUS264 through-hole mounting
Applications
- High-frequency motor drives and servo systems
- Industrial inverter circuits
- Uninterruptible power supply (UPS) systems
Procurement Notes
Verify component authenticity by checking manufacturer markings against official datasheets. Confirm package integrity and pin configuration prior to installation. Ensure ordering suffixes match specific thermal or electrical variants if applicable. Request batch traceability documentation for quality assurance compliance.
Selection Notes
Select this component for designs requiring high current handling with low switching losses. Evaluate thermal dissipation requirements based on the 0.25 °C/W junction-to-case resistance. Ensure gate drive voltages remain within the specified ±20 V limits to prevent device damage during operation.
Part Context
This part belongs to the IXYS 1200V XPT IGBTs GenX3 series, designed for medium to high-power industrial applications. It represents an evolution in discrete IGBT technology, focusing on efficiency improvements over previous generations while maintaining ruggedness in demanding electrical environments.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires matching voltage, current, package, and switching characteristics from official manufacturer substitution guides.
