IXYL40N250CV1

Overview

The IXYL40N250CV1 is a high-voltage silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a Copacked design integrating an anti-parallel diode within the same package to minimize stray inductance and improve switching performance. The device is rated for a collector-emitter voltage of 2500 V and supports a continuous collector current of 40 A at 25°C. Key electrical parameters include a maximum collector-emitter saturation voltage of 3.4 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation capacity of 660 W. The component operates within a junction temperature range of -55°C to +175°C and utilizes a TO-247PLUS-3 through-hole package.

Feature Summary

• Copacked architecture combining IGBT and anti-parallel diode for reduced parasitic inductance
• High-voltage capability optimized for demanding industrial applications
• Robust thermal management with high power dissipation rating

Applications

• High-voltage DC-DC converters
• Industrial motor drives
• Uninterruptible power supply (UPS) systems

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributor before procurement. Confirm that the TO-247PLUS-3 pinout matches the target PCB footprint. Ensure thermal interface materials are compatible with the specified maximum junction temperature limits to maintain reliability under load.

Selection Notes

Select this component when designing circuits requiring 2500 V blocking voltage with moderate current handling capabilities. The copacked configuration makes it suitable for topologies where minimizing loop inductance is critical for efficiency. Compare the 3.4 V saturation voltage against alternative devices to ensure conduction losses meet system thermal constraints.

Part Context

This part belongs to IXYS' high-voltage IGBT portfolio, specifically utilizing XPT technology for optimized trade-offs between conduction and switching losses. The IXYL series is engineered for robustness in harsh environments, offering higher ruggedness compared to standard field-stop technologies while maintaining competitive switching speeds for high-voltage applications.

Replacement Considerations

Direct replacements must match the 2500 V rating, 40 A current capacity, and TO-247PLUS-3 package. Verify that any substitute maintains similar copacked diode characteristics and thermal resistance values to ensure compatibility with existing heat sink designs and circuit protection mechanisms.