IXYN140N120A4

Overview

The IXYN140N120A4 is a silicon N-channel Insulated Gate Bipolar Transistor (IGBT) from IXYS, utilizing XPT™ GenX4™ trench technology. It features a 1200V collector-emitter voltage rating and a continuous collector current of 140A at 25°C. The device exhibits a low saturation voltage of 2.35V and supports switching frequencies up to 5kHz. Designed for high power density, it operates within a junction temperature range of -55°C to +175°C and is housed in a TO-247-3 package with a maximum power dissipation of 880W.

Feature Summary

• Utilizes XPT™ thin wafer technology for optimized low conduction losses
• Supports switching frequencies up to 5kHz with low gate drive requirements
• Features high power density suitable for compact thermal designs

Applications

• Power inverters
• Motor drives
• PFC circuits
• Battery chargers
• Welding machines

Procurement Notes

Verify the specific suffix against official IXYS documentation to confirm exact electrical parameters and packaging configuration. Cross-reference datasheet values with distributor specifications to ensure compatibility with system voltage and current requirements before procurement.

Selection Notes

Select this component for applications requiring high efficiency at moderate switching frequencies. Ensure the thermal management design accommodates the 880W power dissipation capability. Verify that the gate drive circuitry aligns with the specified ±20V maximum gate-emitter voltage limits.

Part Context

This part belongs to the IXYS IXYxN120A4 series, representing fourth-generation trench IGBTs. The series is characterized by the integration of XPT™ technology to achieve superior performance metrics compared to previous generations, specifically targeting industrial power conversion needs.

Replacement Considerations

Consult official IXYS substitution guides for verified alternatives. Generic replacements may not match the specific Vce(sat) or switching characteristics defined by the GenX4™ architecture.