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The IXYS IXYP15N65C3D1M is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing Silicon technology and XPT-GenX3 architecture. It features a TO-220AB/FP package with through-hole mounting. Key electrical parameters include a collector-emitter maximum voltage of 650 V, a continuous collector current of 15 A at 25°C, and a collector-emitter saturation voltage of 2.27 V. The device has a power dissipation rating of 53 W, operates within a temperature range of -55°C to +175°C, and supports a gate-emitter voltage of ±20 V.
Verify the specific suffix 'M' against the manufacturer's official datasheet to confirm pinout compatibility and mechanical dimensions, as variations may exist between standard and modified packages. Ensure the ordering part number matches the exact technical specifications required for the target application circuit design.
Select this component for applications requiring a balance of moderate current handling and high voltage blocking in a standard through-hole format. Compare the 2.27 V saturation voltage and 53 W power dissipation limits against thermal constraints. Consider alternative package types if surface-mount solutions are preferred for automated assembly processes.
This device belongs to the IXYS IXYP series of discrete IGBTs, which utilize advanced field-stop trench technology. The series is characterized by improved switching characteristics and ruggedness compared to older planar designs. The IXYP15N65C3D1M represents a specific current-rated variant within the 650V voltage class lineup.
Cross-reference with other IXYS models in the IXYP series or equivalent C3-class devices from other manufacturers. Verify that substitute parts match the 650V rating, 15A current capacity, and TO-220AB/FP package outline to ensure mechanical and electrical interchangeability.