IXYP15N65C3D1M

IXYP15N65C3D1M

$1.73
  • Description:IGBT PT 650V 16A TO-220-3
  • Series:GenX3™, XPT™

SKU:3c9850053818 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT PT 650V 16A TO-220-3
  • Series:GenX3™, XPT™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:PT
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):16 A
  • Current - Collector Pulsed (Icm):80 A
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 15A
  • Power - Max:48 W
  • Switching Energy:270µJ (on), 230µJ (off)
  • Input Type:Standard
  • Gate Charge:19 nC
  • Td (on/off) @ 25°C:15ns/68ns
  • Test Condition:400V, 15A, 20Ohm, 15V
  • Reverse Recovery Time (trr):30 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:-
  • Qualification:-

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IXYP15N65C3D1M

Overview

The IXYS IXYP15N65C3D1M is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing Silicon technology and XPT-GenX3 architecture. It features a TO-220AB/FP package with through-hole mounting. Key electrical parameters include a collector-emitter maximum voltage of 650 V, a continuous collector current of 15 A at 25°C, and a collector-emitter saturation voltage of 2.27 V. The device has a power dissipation rating of 53 W, operates within a temperature range of -55°C to +175°C, and supports a gate-emitter voltage of ±20 V.

Feature Summary

  • Integrates XPT-GenX3 field-stop trench technology for optimized switching performance.
  • Features a robust TO-220AB/FP through-hole package designed for reliable thermal management.
  • Provides high short-circuit capability and low conduction losses typical of the C3-class IGBT family.

Applications

  • Motor drive inverters
  • Switched-mode power supplies (SMPS)
  • Induction heating systems

Procurement Notes

Verify the specific suffix 'M' against the manufacturer's official datasheet to confirm pinout compatibility and mechanical dimensions, as variations may exist between standard and modified packages. Ensure the ordering part number matches the exact technical specifications required for the target application circuit design.

Selection Notes

Select this component for applications requiring a balance of moderate current handling and high voltage blocking in a standard through-hole format. Compare the 2.27 V saturation voltage and 53 W power dissipation limits against thermal constraints. Consider alternative package types if surface-mount solutions are preferred for automated assembly processes.

Part Context

This device belongs to the IXYS IXYP series of discrete IGBTs, which utilize advanced field-stop trench technology. The series is characterized by improved switching characteristics and ruggedness compared to older planar designs. The IXYP15N65C3D1M represents a specific current-rated variant within the 650V voltage class lineup.

Replacement Considerations

Cross-reference with other IXYS models in the IXYP series or equivalent C3-class devices from other manufacturers. Verify that substitute parts match the 650V rating, 15A current capacity, and TO-220AB/FP package outline to ensure mechanical and electrical interchangeability.

IXYP15N65C3D1MIXYP15N65C3D1M
$1.73
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