IXYP48N65A5

Overview

The IXYS IXYP48N65A5 is a single N-channel IGBT utilizing XPT™ thin-wafer technology and Trench process. It features a collector-emitter voltage (Vces) of 650 V and a continuous collector current (Ic110) of 48 A at 110 °C case temperature. The device exhibits a typical saturation voltage (Vce(sat)) of 1.27 V at 30 A and 15 V gate drive, with a maximum of 1.40 V. Switching characteristics include a typical turn-off fall time (tfi) of 137 ns and total gate charge (Qg) of 100 nC. Thermal resistance from junction to case (Rth,jc) is 0.46 °C/W. It operates within a junction temperature range of -55 °C to 175 °C.

Feature Summary

• Optimized for low conduction losses via proprietary XPT™ thin-wafer technology
• Features square reverse bias safe operating area (RBSOA) for hard switching without snubber diodes
• Provides high surge current capability and low gate charge requirements

Applications

• Power inverters
• Uninterruptible power supplies (UPS)
• Active power factor correction (PFC) circuits
• Battery chargers
• Welding machines

Procurement Notes

Verify the manufacturer designation on official documentation, as Littelfuse acquired IXYS semiconductor assets. Confirm the specific package variant matches the required thermal and mechanical constraints for the target application. Ensure compliance with RoHS directives and check for any recent product change notices regarding specifications or packaging updates before finalizing procurement orders.

Selection Notes

Select this component for designs requiring efficient switching up to 5 kHz with moderate current handling. Evaluate the thermal management strategy based on the 0.46 °C/W junction-to-case resistance and the 326 W power dissipation rating at 25 °C case temperature. Consider the positive temperature coefficient of Vce(sat) for potential parallel operation in higher current applications.

Part Context

This device belongs to the Gen5 XPT™ IGBT family, designed to balance conduction and switching losses. It serves as a solid-state switch for high-voltage circuits, replacing older non-punch-through technologies. The TO-220-3L package provides an international standard footprint suitable for through-hole mounting on printed circuit boards.

Replacement Considerations

Direct replacements must match the 650 V rating, 48 A current capacity, and TO-220-3L package. Verify that alternative devices offer comparable Rth,jc values and similar switching energy losses (Eon/Eoff) to maintain system efficiency and thermal performance.