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Product Detailed Parameters
- Description：IGBT PT 650V 225A PLUS247
- Series：GenX3™, XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：225 A
- Current - Collector Pulsed (Icm)：460 A
- Vce(on) (Max) @ Vge, Ic：1.85V @ 15V, 70A
- Power - Max：830 W
- Switching Energy：1.27mJ (on), 1.37mJ (off)
- Input Type：Standard
- Gate Charge：168 nC
- Td (on/off) @ 25°C：29ns/150ns
- Test Condition：400V, 50A, 3Ohm, 15V
- Reverse Recovery Time (trr)：156 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：PLUS247™-3
- Grade：-
- Qualification：-
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Overview
The IXYX100N65B3D1 is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a TO-247AD package with screw mount installation. The device has a maximum collector-emitter voltage of 650 V and a continuous collector current of 100 A at 25°C. The collector-emitter saturation voltage is 1.8 V, with a gate-emitter voltage range of -20 V to 20 V. Power dissipation is rated at 600 W, operating within a temperature range of -55°C to +175°C.
Feature Summary
- Utilizes XPT and GenX3 technologies for optimized performance in medium-speed switching applications.
Applications
- Medium frequency power conversion circuits
- Industrial motor drives
- Inverter systems
Procurement Notes
Verify the specific manufacturer datasheet for the IXYX100N65B3D1 to confirm all electrical parameters and mechanical dimensions before integration. Ensure thermal management solutions align with the specified power dissipation and junction temperature limits. Cross-reference ordering information directly with authorized IXYS distributors to guarantee component authenticity and supply chain integrity.
Selection Notes
Select this component for designs requiring 650V blocking capability and 100A continuous current handling in a TO-247AD form factor. Consider the 1.8V saturation voltage for conduction loss calculations. Verify that the driving circuitry supports the required gate-emitter voltage levels and switching frequencies compatible with the GenX3 technology characteristics.
Part Context
This part belongs to the IXYS discrete IGBT portfolio, specifically utilizing XPT and GenX3 technologies. These technologies are designed to balance low saturation voltage with fast switching speeds, making them suitable for various industrial power electronics applications where efficiency and reliability are critical requirements.
Replacement Considerations
Publicly confirmed substitute part numbers for the IXYX100N65B3D1 were not identified in the available documentation. Evaluate other IXYS models within the same voltage and current ratings, such as those from the IXYH or IXYX series, after verifying pinout compatibility and electrical parameter alignment.
