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The IXYX110N120B4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from IXYS, utilizing XPT technology and Gen 4 Trench architecture. It features a TO-247-3 through-hole package with a maximum collector-emitter voltage of 1200 V. The device supports a continuous collector current of 110 A at 25°C, with a peak pulsed current capacity of 340 A. Key electrical parameters include a saturation voltage of 2.1 V and a power dissipation rating of 880 W. Operating temperatures range from -55°C to +175°C.
Verify the specific suffix B4 against the manufacturer's official datasheet to confirm pinout compatibility and thermal characteristics. Ensure that the procurement channel provides authentic components with traceable documentation. Cross-reference the ordering code with the latest product release notes to avoid obsolete variants or packaging discrepancies during acquisition.
Select this component when designing circuits requiring high voltage isolation and efficient power handling in a standard through-hole form factor. Evaluate the thermal resistance requirements against the 880 W dissipation limit to determine appropriate heatsinking solutions. Compare the 2.1 V saturation voltage against system efficiency targets to ensure optimal performance in high-current applications.
This device belongs to the IXYS IXYX series, representing fourth-generation trench IGBTs designed for high-power density applications. The series integrates advanced silicon processing techniques to balance switching speed and conduction loss. It serves as a critical switching element in modern power electronics, offering reliability improvements over previous generations while maintaining standard mechanical footprints for easy integration.
Public confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer's official replacement guide for direct equivalents.